Infineon's OptiMOS™ N-channel power MOSFETs were developed to increase efficiency, power density and cost-effectiveness. Designed for high-performance applications and optimized for high switching frequencies, OptiMOS™ products offer the industry's best figure of merit.
![Fet Fet](/uploads/1/3/4/8/134858974/571420759.jpg)
Now complemented by StrongIRFET™ and StrongIRFET™ 2 N-channel MOSFETs, this extended portfolio creates a truly compelling combination. StrongIRFET™ and StrongIRFET™ 2 MOSFETs add robust design and excellent price/performance to the best-in-class technology of OptiMOS™ MOSFETs. Both product families meet the highest quality and performance demands. Pulsus alternans ecg.
Cached
- 功率 mosfet 的 ir mosfet 系列采用成熟的硅工艺,为设计人员提供广泛的器件组合,以支持各种应用,如直流电机、逆变器、smps、照明、负载开关以及电池供电应用。为了便于设计,这些器件采用表面贴装和通孔封装等多种封装方式,带有符合行业标准封装。.
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Ir Fets
Part Number:IRF3710S. MOSFET N-CH 100V 57A. Senators John McCain and Carl Levin discuss counterfeit parts in this SHOCKING video. All product sold herein is sourced directly from the Original.